IDiyas

For the Inventor, By the Inventor

Mechanicville, NY, United States of America

Wanxun He

USPTO Granted Patents = 7 

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 82(Granted Patents)


Location History:

  • Rexford, NY (US) (2016)
  • Mechanicville, NY (US) (2015 - 2017)

Company Filing History:

goldMedal7 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2015-2017

where 'Filed Patents' based on already Granted Patents

7 patents (USPTO):
1. 9793358 - Non-planar semiconductor device with multiple-head epitaxial structure on fin (2017-10-17),
2. 9508794 - Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial heads (2016-11-29),
3. 9275906 - Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads (2016-03-01),
4. 9263516 - Product comprised of FinFET devices with single diffusion break isolation structures (2016-02-16),
5. 9171752 - Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product (2015-10-27),
6. 9123772 - FinFET fabrication method (2015-09-01),
7. 9087720 - Methods for forming FinFETs with reduced series resistance (2015-07-21),

Title: Celebrating the Innovations of Inventor Wanxun He

Introduction: Wanxun He, an accomplished inventor based in Mechanicville, NY, has made significant contributions to the field of semiconductor technology. With a portfolio of seven patents to his name, he exemplifies the spirit of innovation that drives progress in the industry.

Latest Patents: Wanxun He's recent patents focus on cutting-edge developments in non-planar semiconductor structures. One notable invention is a non-planar semiconductor device featuring a multiple-head epitaxial structure on fins. This innovative design incorporates raised semiconductor structures, or fins, with epitaxial layers that can grow into a diamond shape, enhancing the surface area of the device. Additionally, he has developed a mixed N/P-type fin semiconductor structure that implements epitaxial materials, increasing surface area through multiple epitaxial heads. These advancements have the potential to transform semiconductor applications by improving efficiency and performance.

Career Highlights: Throughout his career at Globalfoundries Inc., Wanxun He has established himself as a leading figure in semiconductor research and development. His contributions have not only led to the creation of novel semiconductor structures but have also positioned him as a valuable asset to his organization and the broader technology community.

Collaborations: Wanxun He frequently collaborates with talented colleagues, including Xusheng Kevin Wu and Changyong Xiao. Their combined expertise fosters an environment of innovation, allowing them to push the boundaries of semiconductor technology further.

Conclusion: Wanxun He's work is a testament to the power of innovation in the semiconductor field. With several patents under his belt, his contributions continue to impact technology and inspire future generations of inventors. His journey reflects the commitment to excellence and creativity that defines successful inventors today.

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