The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Jan. 20, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Xusheng Wu, Ballston Lake, NY (US);

Changyong Xiao, Mechanicville, NY (US);

Xiang Hu, Clifton Park, NY (US);

Wanxun He, Rexford, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/201 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 21/0243 (2013.01); H01L 21/0259 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/02639 (2013.01); H01L 21/02664 (2013.01); H01L 21/30604 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0692 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01); H01L 29/201 (2013.01); H01L 21/02538 (2013.01);
Abstract

A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon and silicon germanium, naturally growing into a diamond shape. The surface area of the epitaxial structures is increased by removing portion(s) thereof, masking each type as the other type is grown and then subsequently modified by the removal. The removal may create multi-head (e.g., dual-head) epitaxial structures, together with the neck of the respective raised structure resembling a Y-shape.


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