Jiangsu, China

Wanli Wang



Average Co-Inventor Count = 3.6

ph-index = 1


Location History:

  • Wuxi New District, CN (2017)
  • Jiangsu, CN (2017)

Company Filing History:


Years Active: 2017

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3 patents (USPTO):

Title: Innovations of Wanli Wang in IGBT Technology

Introduction

Wanli Wang is a notable inventor based in Jiangsu, China, recognized for his contributions to the field of insulated gate bipolar transistors (IGBT). With a total of three patents to his name, he has made significant advancements in manufacturing methods that enhance the performance of IGBTs.

Latest Patents

One of his latest patents is a manufacturing method for reverse conduction insulated gate bipolar transistors (IGBTs). This method involves several steps, including providing a substrate with an IGBT structure, implanting P+ ions onto the back surface, and forming a channel through photolithography and etching processes. The process also includes planarizing the back surface using a laser scanning technique, which improves the activation efficiency of P-type and N-type impurities, ultimately enhancing the performance of the IGBT.

Another significant patent by Wanli Wang is a method for manufacturing injection-enhanced insulated-gate bipolar transistors. This method streamlines the production cycle by allowing the p-type and n-type doped layers to be driven in together, forming the necessary regions in a single drive-in process. This innovation reduces the time required for manufacturing compared to conventional methods.

Career Highlights

Wanli Wang has worked with CSMC Technologies Fab1 Co., Ltd. and CSMC Technologies Fab2 Co., Ltd., where he has applied his expertise in semiconductor technology. His work in these companies has contributed to the advancement of IGBT manufacturing processes.

Collaborations

Throughout his career, Wanli Wang has collaborated with notable colleagues, including Genyi Wang and Xiaoshe Deng. Their combined efforts have furthered the development of innovative technologies in the semiconductor industry.

Conclusion

Wanli Wang's contributions to IGBT technology through his patents and career achievements highlight his role as a significant inventor in the field. His innovative methods continue to influence the manufacturing processes of insulated gate bipolar transistors, showcasing the importance of advancements in this area.

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