Csmc Technologies Fab1 Co., Ltd.

Csmc Technologies Fab2 Co., Ltd.

Wanli Wang

Genyi Wang

Xiaoshe Deng

Xuan Huang

Qiang Rui

A reverse conducting insulated gate bipolar transistor (IGBT) manufacturing method, comprising the following steps: providing a substrate having an IGBT structure formed on the front surface thereof; implanting P+ ions onto the back surface of the substrate; forming a channel on the back surface of the substrate through photolithography and etching processes; planarizing the back surface of the substrate through a laser scanning process to form P-type and N-type interval structures; and forming a back surface collector by conducting a back metalizing process on the back surface of the substrate. Laser scanning process can process only the back surface structure requiring annealing, thus solve the problem of the front surface structure of the reverse conducting IGBT restricting back surface annealing to a low temperature, improving the P-type and N-type impurity activation efficiency in the back surface structure of the reverse conducting IGBT, and enhancing the performance of the reverse conducting IGBT.

Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method

A method for manufacturing an injection-enhanced insulated-gate bipolar transistor, comprising the following steps: an n-type substrate () is provided; a p-type doped layer () is formed on the n-type substrate (); a hard layer () is formed on the p-type doped layer (); a groove () extending to the n-type substrate () is formed by etching on the p-type doped layer (); an n-type doped layer () is formed on the sidewalls and bottom of the groove (); the hard layer () is removed; p-type impurities of the p-type doped layer () and n-type impurities of the n-type doped layer () are driven in together, where the p-type impurities are diffused to form a p-type base region (), and the n-type impurities are diffused to form an n-type buffer layer (); a gated oxide dielectric layer () is formed on the surface of the groove (); and, a polysilicon layer () is deposited in the groove having formed therein the gate oxide dielectric layer (). In the method for manufacturing the injection-enhanced insulated-gate bipolar transistor, the p-type doped layer () and the n-type doped layer () are driven in together to form the p-type base region () and the n-type buffer layer (), as only one drive-in process is required, production cycle is shortened in comparison with a conventional method for manufacturing the injection-enhanced insulated-gate bipolar transistor.

Method for manufacturing injection-enhanced insulated-gate bipolar transistor

A method for manufacturing an IGBT, comprising: providing a substrate having a first surface and a second surface and of a first or second type of electrical conductance; forming grooves at intervals on the first surface of the substrate; filling a semiconductor material of the second or first type of electrical conductance into the grooves to form channels, where the type of electrical conductance of the channels is different from the type of electrical conductance of the substrate; bonding on the first surface of the substrate to form a drift region of the second type of electrical conductance; forming a front-side structure of the IGBT on the basis of the drift region; thinning the substrate starting from the second surface of the substrate until the channels are exposed; and forming a rear-side metal electrode on the channels and the thinned substrate. The method has no specific requirement with respect to sheet flow capacity, nor requires a double-sided exposure machine apparatus, is compatible with a conventional process, and has a simple process and high efficiency.

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Jiangsu, China

Wanli Wang