This inventor holds 12 USPTO granted patents and 4 published patent applications. Top assignee: Diodes Inc.. Active years: 2024-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2024-2026
Title: Innovations of Wan-Yu Kai
Introduction
Wan-Yu Kai is a prominent inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of power MOSFETs. With a total of 10 patents to his name, his work has had a substantial impact on the industry.
Latest Patents
One of his latest patents is for a Power MOSFET with a gate-source ESD diode structure. This innovative apparatus includes a drain and a source on opposing sides of an epitaxial layer, a body region, and a plurality of gates formed in the epitaxial layer. It features an interlayer dielectric layer over the epitaxial layer, along with a gate-source electrostatic discharge (ESD) diode in the interlayer dielectric layer. The design also incorporates a source contact connected to the source and a first terminal of the gate-source ESD diode structure, as well as a gate contact connected to the plurality of gates and a second terminal of the gate-source ESD diode structure. Additionally, it includes a drain contact on opposing sides of the epitaxial layer of the source contact and a breakdown voltage enhancement and leakage prevention structure formed underneath the gate-source ESD diode structure, which comprises a body ring structure.
Another patent by Wan-Yu Kai also focuses on a Power MOSFET with a gate-source ESD diode structure. This apparatus includes a drain and a source on opposing sides of an epitaxial layer, a plurality of gates formed in the epitaxial layer, a source contact connected to the source, and a gate contact connected to the plurality of gates. It features a gate-source electrostatic discharge (ESD) diode connected between the gate contact and the source contact, along with a breakdown voltage enhancement and leakage prevention structure formed underneath the gate-source ESD diode structure.
Career Highlights
Wan-Yu Kai is currently employed at Diodes Incorporated, where he continues to innovate and develop new technologies. His work has been instrumental in advancing the capabilities of semiconductor devices.
Collaborations
Some of his notable coworkers include Chia-Wei Hu and Ta-Chuan Kuo, who have collaborated with him on various projects.
Conclusion
Wan-Yu Kai's contributions to the field of semiconductor technology through his patents and innovations have established him as a key figure in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile