The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Aug. 06, 2024
Diodes Incorporated, Plano, TX (US);
Diodes Incorporated, Plano, TX (US);
Abstract
An electrostatic discharge protection structure in a semiconductor device includes a first trench structure including a first polysilicon structure and a first oxide layer surrounding the first polysilicon structure. A second trench structure includes a second polysilicon structure and a second oxide layer surrounding the second polysilicon structure. A first diode string is disposed between the first trench structure and the second trench structure and adjoins the first polysilicon structure and the second polysilicon structure. A first spacing oxide layer is disposed on the first diode string. A second diode string is disposed on the first spacing oxide layer and connected in parallel with the first diode string. Each of the first and the second diode strings includes first doped regions and second doped regions disposed alternately. A PN junction is formed at an interface between each first doped region and an adjacent second doped region.