The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Jun. 20, 2024
Applicant:
Diodes Incorporated, Plano, TX (US);
Inventors:
Assignee:
Diodes Incorporated, Plano, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 62/109 (2025.01); H10D 30/668 (2025.01); H10D 64/513 (2025.01); H10D 89/611 (2025.01);
Abstract
A method includes growing an epitaxial layer over a substrate, forming a plurality of gates in the epitaxial layer, forming a source in the epitaxial layer, forming a breakdown voltage enhancement and leakage prevention structure comprising a body ring structure in the epitaxial layer, forming a gate-source Electrostatic Discharge (ESD) diode structure over the epitaxial layer, forming a source contact connected to the source and a first terminal of the gate-source ESD diode structure, forming a gate contact connected to the plurality of gates and a second terminal of the gate-source ESD diode structure.