Hwaseong-si, South Korea

Wan-sik Hwang


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Wan-sik Hwang

Introduction

Wan-sik Hwang is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of flash memory technology. His work has been recognized through the granting of a patent, showcasing his expertise and innovative spirit.

Latest Patents

Wan-sik Hwang holds a patent for "Methods of manufacturing flash memory devices by selective removal of nitrogen atoms." This patent describes a method that includes forming a dielectric layer on an active region of a substrate, creating a floating gate, and selectively removing nitrogen atoms from a nitride layer. This innovative approach enhances the manufacturing process of flash memory devices, contributing to advancements in the technology.

Career Highlights

Hwang is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His role at Samsung allows him to work on cutting-edge technologies and contribute to the development of advanced memory solutions. His expertise in flash memory manufacturing has positioned him as a valuable asset to the company.

Collaborations

Wan-sik Hwang has collaborated with notable colleagues, including Jong-Wan Choi and Gil-heyun Choi. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas within the field of electronics.

Conclusion

Wan-sik Hwang's contributions to flash memory technology through his patent and work at Samsung Electronics Co., Ltd. highlight his role as an influential inventor. His innovative methods continue to shape the future of memory devices, demonstrating the importance of creativity in technology.

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