Samsung Electronics Co., Ltd.

Wan-sik Hwang

Gil-heyun Choi

Bo-Young Lee

Eunkee Hong

Ju-seon Goo

Jong-Wan Choi

A method of manufacturing a flash memory device includes: forming a dielectric layer on an active region of a substrate having an isolation region and the active region; forming a floating gate on the dielectric layer; forming an isolation layer in the isolation region; forming a nitride layer including a first nitride layer portion formed on an exposed surface of the floating gate and a second nitride layer portion formed on an exposed surface of the isolation layer; selectively removing nitrogen atoms from the second nitride layer portion of the nitride layer; forming an inter-gate dielectric layer on both the first nitride layer portion and the isolation layer; and forming a control gate on the inter-gate dielectric layer.

Growing community of inventors

Hwaseong-si, South Korea

Wan-sik Hwang