Company Filing History:

4 out of 2,714

Bell Telephone Laboratories

patents

2 out of 3,345

At&t Bell Laboratories

patents

1 out of 9,364

Lucent Technologies Inc.

At&t Laboratories, Limited

Years Active: 1982-2003

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6511872 - Device having a high dielectric constant material and a method of manufacture thereof (2003-01-28),

2. 6143658 - Multilevel wiring structure and method of fabricating a multilevel (2000-11-07),

3. 5467732 - Device processing involving an optical interferometric thermometry (1995-11-21),

4. 5229303 - Device processing involving an optical interferometric thermometry using (1993-07-20),

5. 4645687 - Deposition of III-V semiconductor materials (1987-02-24),

6. 4498953 - Etching techniques (1985-02-12),

7. 4397711 - Crystallographic etching of III-V semiconductor materials (1983-08-09),

8. 4394237 - Spectroscopic monitoring of gas-solid processes (1983-07-19),

9. 4377436 - Plasma-assisted etch process with endpoint detection (1983-03-22),

10. 4359485 - Radiation induced deposition of metal on semiconductor surfaces (1982-11-16),

Title: Vincent Michael Donnelly, Jr.: Innovator in Semiconductor Technology

Introduction

Vincent Michael Donnelly, Jr. is a notable inventor based in Berkeley Heights, NJ (US). He holds a total of 10 patents that reflect his significant contributions to the field of semiconductor technology. His work has paved the way for advancements in device manufacturing and multilevel wiring structures.

Latest Patents

Among his latest patents is a device featuring a high dielectric constant material and a method of manufacture thereof. This invention provides a method for manufacturing a semiconductor device by depositing a metal oxide containing a dopant on a substrate. The metal used can be aluminum or silicon, with the dopant being zirconium or hafnium. The process includes etching the doped metal oxide with a plasma containing a halogenated compound. Another significant patent is for a multilevel wiring structure and method of fabricating it. This invention involves a device with wires on at least two levels, utilizing copper or a metal containing copper. It also includes a via plug that electrically connects wires on different levels, ensuring that the resulting interconnect is substantially non-oxidized copper or copper-containing metal.

Career Highlights

Vincent has had a distinguished career, having worked at renowned institutions such as Bell Telephone Laboratories and AT&T Bell Laboratories. His experience in these organizations has greatly influenced his innovative work in semiconductor technology.

Collaborations

Throughout his career, Vincent has collaborated with notable individuals, including Daniel L. Flamm and Robert F. Karlicek, Jr. These collaborations have contributed to the development of his patents and innovations.

Conclusion

Vincent Michael Donnelly, Jr. is a prominent figure in the field of semiconductor technology, with a strong portfolio of patents that demonstrate his innovative spirit. His contributions continue to impact the industry and inspire future advancements.

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