The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1983
Filed:
Oct. 01, 1982
Applicant:
Inventors:
Vincent M Donnelly, Berkeley Heights, NJ (US);
Daniel L Flamm, Chatham Township, Morris County, NJ (US);
Dale E Ibbotson, Westfield, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156647 ; 1566591 ; 156662 ; 2041 / ; 252 791 ;
Abstract
Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.
Donnelly, Vincent. (1983). Crystallographic etching of iii-v semiconductor materials (U.S. Patent No. 4397711). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4397711
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile