The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Jul. 10, 2001
Applicant:
Inventors:
Vincent M. Donnelly, Jr., Berkeley Heights, NJ (US);
Avinoam Kornblit, Highland Park, NJ (US);
Kalman Pelhos, New Brunswick, NJ (US);
Assignee:
Agere Systems Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
Abstract
The present invention provides a method of manufacturing a semiconductor device. The method includes depositing a metal oxide containing a dopant and having a high dielectric constant on a substrate; wherein the metal is aluminum or silicon and the dopant is zirconium or hafnium and etching the doped metal oxide with a plasma containing a halogenated compound.