Vachan Kumar

Title: Vachan Kumar and Semiconductor Capacitor Innovations.

Introduction

Vachan Kumar is an inventor based in Hillsboro, Oregon, and works at Intel Corporation. His patent work focuses on integrating capacitor structures into semiconductor devices, including designs that use ferroelectric materials and connect with transistor source or drain regions. Kumar is named on 2 patents.

Latest Patents

Kumar’s recent patent work includes “Ferroelectric Capacitor Within Backside Interconnect” and “Capacitor Structure Embedded Within Source or Drain Region.”

“Ferroelectric Capacitor Within Backside Interconnect” describes a capacitor with a ferroelectric layer between two electrodes. A backside contact can connect the first electrode to a transistor’s source or drain region, while the second electrode connects to a backside interconnect feature. The capacitor may extend through one or more backside interconnect layers and may use a multi-plate arrangement. Potential applications include non-volatile memory and processor cache.

“Capacitor Structure Embedded Within Source or Drain Region” presents techniques for integrating a capacitor with a transistor’s source or drain region. In the described device, the capacitor’s first electrode contacts that region, and its second electrode contacts a conductive contact formed above the capacitor. The capacitor may be ferroelectric, with a ferroelectric layer between its electrodes.

Career Highlights

Kumar’s disclosed inventions address ways to incorporate capacitors into semiconductor architectures, including backside interconnects and transistor regions. These approaches describe potential device structures for memory and processor applications.

Collaborations

Kumar’s listed coworker is Sourav Dutta. The patent descriptions concern semiconductor-device structures developed in the context of Kumar’s work at Intel Corporation.

Conclusion

Vachan Kumar’s patent work explores integrating ferroelectric and other capacitor structures with transistor regions and backside interconnects, with potential applications in memory and processor technologies.