Company Filing History:
Years Active: 2025
Title: Uwe Badstuebner: Innovator in Insulated Gate Bipolar Transistors
Introduction
Uwe Badstuebner is a notable inventor based in Zurich, Switzerland. He has made significant contributions to the field of semiconductor technology, particularly in the development of insulated gate bipolar transistors.
Latest Patents
Uwe Badstuebner holds a patent for an insulated gate bipolar transistor that includes a trench Schottky electrode. This innovative design features a source electrode, a collector electrode, a source layer, a base layer, a drift layer, and a collector layer. The trench gate electrodes extend through the base layer into the drift layer, creating a channel located between the source layer, the base layer, and the drift layer. The trench Schottky electrode is positioned adjacent to one of the trench gate electrodes and consists of an electrically conductive Schottky layer that is arranged laterally to the base layer and extends through the base layer into the drift layer. This Schottky layer is electrically connected to the source electrode, and collection areas are located in the drift layer at the respective trench gate electrode bottoms or the trench Schottky electrode. The Schottky layer forms a Schottky contact to the collection area at a contact area. Uwe Badstuebner has 1 patent to his name.
Career Highlights
Throughout his career, Uwe Badstuebner has worked with prominent companies in the industry. He has been associated with Hitachi Energy Ltd and Hitachi Energy Switzerland AG, where he has contributed to various projects and advancements in technology.
Collaborations
Uwe has collaborated with talented individuals such as Florin Udrea and Marina Antoniou, enhancing his work through shared expertise and innovative ideas.
Conclusion
Uwe Badstuebner's contributions to the field of insulated gate bipolar transistors highlight his innovative spirit and dedication to advancing semiconductor technology. His work continues to influence the industry and inspire future innovations.
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