The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Nov. 06, 2020
Hitachi Energy Ltd, Zürich, CH;
Florin Udrea, Cambridge, GB;
Marina Antoniou, Cambridge, GB;
Neophytos Lophitis, Hinckley, GB;
Chiara Corvasce, Bergdietikon, CH;
Luca De-Michielis, Aarau, CH;
Umamaheswara Vemulapati, Windisch, CH;
Uwe Badstuebner, Zurich, CH;
Munaf Rahimo, Gänsbrunnen, CH;
Hitachi Energy Ltd, Zürich, CH;
Abstract
An insulated gate bipolar transistor includes a source electrode, a collector electrode, a source layer, a base layer, a drift layer and a collector layer. Trench gate electrodes extend through the base layer into the drift layer. A channel is located between the source layer, the base layer and the drift layer. A trench Schottky electrode is adjacent to one of the trench gate electrodes and includes an electrically conductive Schottky layer arranged lateral to the base layer and extends through the base layer into the drift layer. The Schottky layer is electrically connected to the source electrode. Collection areas are located in the drift layer at a respective trench gate electrode bottom of the trench gate electrodes or of the trench Schottky electrode. The Schottky layer forms a Schottky contact to the collection area at a contact area.