Hitachi Energy Ltd

Hitachi Energy Switzerland Ag

Uwe Badstuebner

Florin Udrea

Chiara Corvasce

Luca De-Michielis

Umamaheswara Vemulapati

Marina Antoniou

Neophytos Lophitis

An insulated gate bipolar transistor includes a source electrode, a collector electrode, a source layer, a base layer, a drift layer and a collector layer. Trench gate electrodes extend through the base layer into the drift layer. A channel is located between the source layer, the base layer and the drift layer. A trench Schottky electrode is adjacent to one of the trench gate electrodes and includes an electrically conductive Schottky layer arranged lateral to the base layer and extends through the base layer into the drift layer. The Schottky layer is electrically connected to the source electrode. Collection areas are located in the drift layer at a respective trench gate electrode bottom of the trench gate electrodes or of the trench Schottky electrode. The Schottky layer forms a Schottky contact to the collection area at a contact area.

Insulated gate bipolar transistor including trench Schottky electrode

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Zurich, Switzerland

Uwe Badstuebner