This inventor holds 1 USPTO granted patent. Top assignees: Intel Corporation, The State University of New York, The University of Texas System. Active years: 2016.
Company Filing History:
1 out of 56,222 
1 out of 2,043 
1 out of 5,627 
Years Active: 2016
Title: Uttam Singisetti: Innovator in Non-Volatile Memory Technology
Introduction
Uttam Singisetti is a notable inventor based in East Amherst, NY (US). He has made significant contributions to the field of non-volatile memory technology, particularly through his innovative patent.
Latest Patents
Singisetti holds a patent for a non-volatile latch using magneto-electric and ferro-electric tunnel junctions. This non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures that maintain data within the SRAM cell even when power is off. In some implementations, the magnetoelectric and ferroelectric structures can be programmed using a NOR or tristate gate coupled to the internal state of the SRAM cell. Additionally, these structures can be configured as programmable resistors in the cross-coupled signal path of the SRAM inverters.
Career Highlights
Throughout his career, Uttam Singisetti has worked with prestigious institutions such as the University of Texas System and the State University of New York. His work has been instrumental in advancing memory technology, showcasing his expertise and dedication to innovation.
Collaborations
Some of his notable coworkers include Andrew Marshall and Jonathan Bird. Their collaborative efforts have contributed to the development of cutting-edge technologies in the field.
Conclusion
Uttam Singisetti's contributions to non-volatile memory technology highlight his role as an influential inventor. His innovative patent and collaborations with esteemed institutions and colleagues underscore his commitment to advancing the field.