The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Apr. 20, 2015
The Board of Regents of the University of Texas System, Austin, TX (US);
The Research Foundation for the State University of New York Stor—university AT Buffalo, Amherst, NY (US);
Intel Corporation, Santa Clara, CA (US);
Andrew Marshall, Dallas, TX (US);
Jonathan P. Bird, Buffalo, NY (US);
Uttam Singisetti, East Amherst, NY (US);
Dmitri E. Nikonov, Beaverton, OR (US);
Board of Regents, The University of Texas System, Austin, TX (US);
The Research Foundation For The State University of New York University At Buffalo, Amherst, NY (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off. In some implementations, the magnetoelectric and ferroelectric structures can be programmed using a NOR or tristate gate coupled to an internal state of the SRAM cell. In other implementations, the magnetoelectric and ferroelectric structures can be configured as programmable resistors in the cross-coupled signal path of the SRAM inverters.