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For the Inventor, By the Inventor

Boise, ID, United States of America

Ugo Russo

LinkedIn
USPTO Granted Patents = 41 

 

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 96(Granted Patents)


Location History:

  • Monza, IT (2014 - 2015)
  • Boise, ID (US) (2016 - 2024)

Company Filing History:

goldMedal37 out of 37,972 
 
Micron Technology Incorporated
 patents
silverMedal2 out of 54,750 
 
Intel Corporation
 patents
where one patent can have more than one assignee

Years Active: 2014-2025

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Areas of Expertise:
Microelectronic Devices
Tunneling Structures
Memory Cells
Non-Volatile Memory
Charge Trap Structures
Phase Change Memory
Memory Endurance
Data States Determination
Select Gates
NAND Write Performance
Memory Device Lifecycle
Resistance Variable Materials
41 patents (USPTO):Explore Patents
1. 12501619 - Microelectronic devices with tunneling structures having partial-height high-κ material regions (2025-12-16),
2. 12423002 - Selectively programming retired wordlines of a memory device (2025-09-23),
3. 12417035 - Modified read counter incrementing scheme in a memory sub-system (2025-09-16),
4. 12400688 - Assemblies comprising memory cells and select gates; and methods of forming assemblies (2025-08-26),
5. 12353771 - Charge loss mitigation throughout memory device lifecycle by proactive window shift (2025-07-08),
6. 12326782 - Adjustment of code rate as function of memory endurance state metric (2025-06-10),
7. 12260916 - Partial block handling in a non-volatile memory device (2025-03-25),
8. 12224016 - Transient and stable state read operations of a memory device (2025-02-11),
9. 12131028 - Programming selective word lines during an erase operation in a memory device (2024-10-29),
10. 11983067 - Adjustment of code rate as function of memory endurance state metric (2024-05-14),
11. 11977774 - Charge loss mitigation throughout memory device lifecycle by proactive window shift (2024-05-07),
12. 11961581 - Assemblies comprising memory cells and select gates; and methods of forming assemblies (2024-04-16),
13. 11925022 - Microelectronic and semiconductor devices with a tunneling structure free of high-γ material by a select gate structure, and related methods (2024-03-05),
14. 11922029 - Modified read counter incrementing scheme in a memory sub-system (2024-03-05),
15. 11901014 - Partial block handling in a non-volatile memory device (2024-02-13),

Title: Innovator Spotlight: Ugo Russo - Pioneering Memory Device Technologies

Introduction: Ugo Russo, a prolific inventor based in Boise, ID, has left an indelible mark in the field of memory device advancements. With 32 patents to his name, Russo's innovative solutions have significantly contributed to enhancing memory device performance and durability.

Latest Patents:

1. Adjustment of code rate as function of memory endurance state metric: Russo's method involves determining the memory endurance state metric of a memory device segment, adjusting the code rate based on this metric, and optimizing memory unit allocation for data storage and error correction metadata.

2. Charge loss mitigation throughout memory device lifecycle by proactive window shift: This patent addresses the mitigation of charge loss in memory devices over their lifecycle by setting write trims based on the average number of program erase cycles and executing write commands accordingly.

Career Highlights: Ugo Russo has made impactful contributions to leading tech companies such as Micron Technology Incorporated and Intel Corporation. His expertise and innovative approach have played a pivotal role in advancing memory device technologies within these organizations.

Collaborations: Throughout his career, Ugo Russo has collaborated closely with esteemed professionals in the industry, including Andrea Redaelli and Chris M Carlson. Together, they have worked on cutting-edge projects that have pushed the boundaries of memory device innovation.

Conclusion: Ugo Russo's groundbreaking work in the field of memory device technologies underscores his commitment to driving progress and excellence in the industry. His inventive spirit and collaborative efforts continue to shape the future of memory devices, making him a distinguished figure in the world of innovation.

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