Hualien, Taiwan

Tzung-Hua Ying

This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tzung-Hua Ying. Retrieved from https://idiyas.com/inventor/tzung-hua-ying-yn341bvf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: **Innovative Contributions of Tzung-Hua Ying in Silicon Nitride Deposition**

Introduction

Tzung-Hua Ying is a distinguished inventor based in Hualien Hsien, Taiwan. He has made significant advancements in the field of semiconductor manufacturing, particularly through his innovative approaches to silicon nitride deposition. With one patent to his name, Ying is recognized for his contributions to enhancing the performance and selectivity of semiconductor materials.

Latest Patents

Tzung-Hua Ying holds a patent for a unique method aimed at increasing the selectivity of silicon nitride deposition. This groundbreaking method involves providing a substrate and forming a silicon oxide layer over a portion of that substrate. By passing ammonia (NH) over the silicon oxide layer and substrate surface for a specified duration, a surface treatment is performed. Following this treatment, silicon nitride is deposited over the substrate and silicon oxide layer, leading to enhanced performance in semiconductor applications.

Career Highlights

Ying is currently employed at United Microelectronics Corporation, a leading provider in the semiconductor industry. Throughout his career, he has dedicated himself to advancing technology and pushing the boundaries of semiconductor fabrication processes. His work has contributed to the refinement of manufacturing techniques, resulting in higher efficiency and selectivity in silicon nitride deposition.

Collaborations

During his professional journey, Tzung-Hua Ying has collaborated with talented colleagues such as Tang Yu and Tse-Wei Liu. Together, they have exchanged knowledge and ideas, fostering an environment of innovation and creativity within their organization.

Conclusion

Tzung-Hua Ying's innovative method for increasing selectivity in silicon nitride deposition exemplifies the continual progress in semiconductor technology. His contributions at United Microelectronics Corporation, along with his collaborative efforts, position him as a notable figure in the realm of inventions and innovations within the industry. As semiconductor technology continues to evolve, inventors like Ying play a crucial role in shaping the future of electronic materials and devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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