The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Dec. 18, 2000
Applicant:
Inventors:
Tzung-Hua Ying, Hualien Hsien, TW;
Tang Yu, Hsinchu Hsien, TW;
Tse-Wei Liu, Hsinchu, TW;
Cheng-Chieh Huang, Taipei Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of increasing the selectivity of silicon nitride deposition. A substrate is provided. A silicon oxide layer is formed over a portion of the substrate. Ammonia NH is passed over the silicon oxide layer and the substrate surface for a definite period to perform a surface treatment. Silicon nitride is subsequently deposited over the substrate and the silicon oxide layer.