Company Filing History:
Years Active: 2014-2016
Title: Tzung-Bin Huang: Innovator in Memory Technology
Introduction
Tzung-Bin Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on innovative methods and structures that enhance memory performance and efficiency.
Latest Patents
Huang's latest patents include a memory structure and operation method that provides a novel approach to memory design. This invention features a triode for alternating current (TRIAC) and a memory cell that is electrically connected to the TRIAC. Another notable patent is a method for fabricating resistive random access memory (RRAM). This method involves forming a plurality of word lines on a substrate, creating a spacer-type resistance layer, and utilizing a photoresist stripe pattern to define the top electrodes.
Career Highlights
Tzung-Bin Huang is currently employed at Powerchip Technology Corporation, where he continues to push the boundaries of memory technology. His expertise and innovative mindset have positioned him as a key player in the industry.
Collaborations
Huang has collaborated with notable colleagues, including Chan-Ching Lin and Chen-Hao Huang, contributing to various projects that advance memory technology.
Conclusion
Tzung-Bin Huang's contributions to memory technology through his patents and work at Powerchip Technology Corporation highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of memory devices.