Powerchip Technology Corporation

Tzung-Bin Huang

Chun-Cheng Chen

Chan-Ching Lin

Chen-Hao Huang

Ching-Hua Chen

Hann-Ping Hwang

This invention provides a memory structure and an operation method thereof. The memory structure includes a triode for alternating current (TRIAC) and a memory cell. The memory cell is electrically connected to the TRIAC.

Memory structrue and operation method thereof

A method of fabricating a resistive random access memory (RRAM) device is disclosed. A plurality of word lines extending along a first direction are formed on a substrate with a recess between the word lines. A spacer-type resistance layer and a top electrode layer are formed on a sidewall of each of the word lines. A photoresist stripe pattern extending along a second direction is then formed on the substrate. The first direction is perpendicular to the second direction. An etching process is performed to remove the top electrode layer and the spacer-type resistance layer not covered by the photoresist stripe pattern to form a plurality of top electrodes. A diode is formed on each of the top electrodes.

Method for fabricating resistive random access memory

A resistive random access memory (RRAM) unit includes at least one bit line extending along a first direction, at least one word line disposed on a substrate and extending along a second direction so as to intersect the bit line, a hard mask layer on the word line to isolate the word line from the bit line, a first memory cell on a sidewall of the word line, and a second memory cell on the other sidewall of the word line.

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Hsinchu, Taiwan

Tzung-Bin Huang