The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Nov. 13, 2012
Applicant:
Powerchip Technology Corporation, Hsinchu, TW;
Inventors:
Chan-Ching Lin, Taipei, TW;
Chen-Hao Huang, Miaoli County, TW;
Tzung-Bin Huang, Hsinchu, TW;
Chun-Cheng Chen, Changhua County, TW;
Ching-Hua Chen, Hsinchu, TW;
Assignee:
Powerchip Technology Corporation, Hsinchu Science Park, Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A resistive random access memory (RRAM) unit includes at least one bit line extending along a first direction, at least one word line disposed on a substrate and extending along a second direction so as to intersect the bit line, a hard mask layer on the word line to isolate the word line from the bit line, a first memory cell on a sidewall of the word line, and a second memory cell on the other sidewall of the word line.