Hsinchu, Taiwan

Tzu-Yang Ho

USPTO Granted Patents = 6 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2022-2025

where 'Filed Patents' based on already Granted Patents

6 patents (USPTO):

Title: Tzu-Yang Ho: Innovator in Semiconductor Technology

Introduction

Tzu-Yang Ho is a renowned inventor based in Hsinchu, Taiwan, recognized for his significant contributions to the field of semiconductor technology. With five patents to his name, he has developed innovative methods that enhance the efficiency and functionality of semiconductor devices.

Latest Patents

Among his latest patents, Tzu-Yang Ho introduced a method for creating a topology selective and sacrificial silicon nitride layer for generating spacers in semiconductor devices. This method involves forming a first silicon nitride layer within the opening of the semiconductor device, which includes an epitaxial source/drain and a metal gate. The process includes layering a second silicon nitride layer as a sacrificial component and subsequently removing it from the sidewalls of the first silicon nitride layer. This innovative approach facilitates the deposition of a metal layer in the opening to form a metal drain.

Another pivotal patent from Tzu-Yang focuses on the structure of semiconductor devices and the methods used to form them. This device structure encompasses a gate electrode layer above a substrate, source/drain epitaxial features, and a series of hard mask layers and dielectric layers that ensure structural integrity and performance.

Career Highlights

Tzu-Yang Ho is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leading entity in the semiconductor fabrication industry. His work has had a profound impact on the development of advanced semiconductor technologies, positioning him as a pivotal figure in the field.

Collaborations

Throughout his career, Tzu-Yang has collaborated with notable coworkers, including Jr-Hung Li and Tze-Liang Lee, contributing to various innovative projects. These collaborations have enhanced the potential for groundbreaking advancements in semiconductor technology.

Conclusion

Tzu-Yang Ho stands out as a leading inventor whose patents continue to drive forward the semiconductor industry. His innovative methodologies and structures demonstrate his commitment to advancing technology and improving the efficiency of semiconductor devices. As he continues his work in Taiwan, Tzu-Yang sets a remarkable example for future inventors and engineers in the field.

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