Company Filing History:
Years Active: 2025
Title: Innovations of Tun-Jen Chang
Introduction
Tun-Jen Chang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative spirit and technical expertise.
Latest Patents
One of his latest patents is a fuse structure that includes first and second transistors, each equipped with a source terminal, a drain terminal, and a gate terminal. This design features a first source/drain contact on the source terminal of the first transistor and a second source/drain contact on the drain terminal of the second transistor. An insulator is placed laterally between these contacts, and a source/drain contact via is connected to the first source/drain contact. The configuration allows for a programming potential that can cause the insulator to break down.
Another significant patent involves the structure and formation method of a semiconductor device with epitaxial structures. This method includes the formation of multiple fin structures over a substrate, with specific lateral distances between them. The process also involves creating p-type and n-type epitaxial structures over these fin structures, enhancing the device's performance and efficiency.
Career Highlights
Tun-Jen Chang is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to contribute to cutting-edge technologies and advancements in semiconductor manufacturing.
Collaborations
He has collaborated with notable coworkers, including Tung-Heng Hsieh and Bao-Ru Young, who have also made significant contributions to the field. Their teamwork has fostered an environment of innovation and creativity within their projects.
Conclusion
Tun-Jen Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices and structures.