The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
May. 15, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a fin structure over a substrate, forming a first source/drain feature and a second source/drain feature over the fin structure, forming a dielectric material over the first source/drain feature and the second source/drain feature, patterning the dielectric layer into insulating features, and forming a first contact plug on the first source/drain feature and a second contact plug on the second source/drain feature. The insulating features include a first insulating feature and a second insulating feature on opposite sides of the first source/drain feature, and a third insulating feature and a fourth insulating feature on opposite sides of the second source/drain feature. The first insulating feature is longer than the third insulating feature. The distance between the first and second insulating features is greater than the distance between the third and fourth insulating features.