Company Filing History:
Years Active: 2012-2024
Title: Tsung-Fu Yang: Innovator in Semiconductor Technology
Introduction
Tsung-Fu Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advanced materials and structures that enhance the performance of semiconductor devices.
Latest Patents
One of his latest patents is titled "Semiconductor device having a 2-D material layer including a channel region and source/drain regions and method for forming the same." This patent describes a semiconductor device that includes a substrate and a 2-D material layer. The 2-D material layer features source/drain regions and a channel region made of a transition metal dichalcogenide (TMD). The design allows for different binding energies of transition metal atoms at the channel and source/drain regions, optimizing device performance.
Another notable patent is for a "Three-dimensional stacked chip package structure." This innovation relates to a stacked chip package structure that incorporates a sloped dam structure on the substrate, which aids in the dispensing process of the underfill. These advancements reflect Yang's commitment to improving semiconductor manufacturing processes.
Career Highlights
Throughout his career, Tsung-Fu Yang has worked with leading organizations in the semiconductor industry. He has been associated with the Industrial Technology Research Institute and Taiwan Semiconductor Manufacturing Company Ltd. His experience in these institutions has allowed him to develop cutting-edge technologies that push the boundaries of semiconductor applications.
Collaborations
Yang has collaborated with notable colleagues, including Su-Tsai Lu and Chiung-Yuan Lin. These partnerships have fostered an environment of innovation and have contributed to the successful development of his patented technologies.
Conclusion
Tsung-Fu Yang is a key figure in the semiconductor industry, with a focus on innovative materials and structures. His patents demonstrate his expertise and commitment to advancing technology in this critical field. His contributions will continue to influence the future of semiconductor devices.