Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Tsung-Fu Yang

Su-Tsai Lu

Yu-Wei Huang

Chenming Hu

Chen Han Chou

Tsung-Han Lin

Weicheng Chu

Chia-Ho Yang

Chih-Hung Chung

Chiung-Yuan Lin

Ching Liang Chang

Tsung-Kai Lin

A semiconductor device includes a substrate, a 2-D material layer, source/drain contacts, and a gate electrode. The 2-D material layer is over the substrate, the 2-D material layer includes source/drain regions and a channel region between the source/drain regions, in which the 2-D material layer is made of a transition metal dichalcogenide (TMD). The source/drain contacts are in contact with source/drain regions of the 2-D material layer, in which a binding energy of transition metal atoms at the channel region of the 2-D material layer is different from a binding energy of the transition metal atoms at the source/drain regions of the 2-D material layer. The gate electrode is over the substrate.

Semiconductor device having a 2-D material layer including a channel region and source/drain regions and method for forming the same

This disclosure related to a stacked chip package structure having a sloped dam structure located on the substrate and beside the chip stack. The dam structure can facilitate the dispensing process of the underfill.

Three dimensional stacked chip package structure

A sealed joint structure of device includes a buffer bump layer, conductive joint portions and a sealed joint portion. The buffer bump layer disposed between a device and a substrate includes first parts and a second part surrounding the first parts. Each of the conductive joint portions includes a first electrode covering each of the first parts and a second electrode on the substrate, and each of the first electrodes is electrically connected to the second electrode. The sealed joint portion includes a joint ring located on the substrate and is jointed with the second part to form a hermetic space between the device and the substrate.

Sealed joint structure of device and process using the same

Growing community of inventors

Hsinchu, Taiwan

Tsung-Fu Yang