Hakodate, Japan

Toshiyuki Shinya

This inventor holds 1 USPTO granted patent. Top assignee: Renesas Technology Corp.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiyuki Shinya. Retrieved from https://idiyas.com/inventor/toshiyuki-shinya-jsj3xya6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 2008

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Toshiyuki Shinya

Introduction

Toshiyuki Shinya is a notable inventor based in Hakodate, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on improving the reliability of semiconductor devices, which is crucial for various electronic applications.

Latest Patents

Toshiyuki Shinya holds a patent for a method of manufacturing a semiconductor device. This patent describes a semiconductor device that enhances packaging reliability. The design includes leads with specific surface placements and a plating layer that improves solder wettability. This innovation is essential for ensuring the durability and performance of semiconductor devices.

Career Highlights

Shinya is associated with Renesas Technology Corporation, where he applies his expertise in semiconductor manufacturing. His work has contributed to advancements in the industry, particularly in enhancing the reliability of electronic components.

Collaborations

Throughout his career, Toshiyuki Shinya has collaborated with talented individuals such as Syuudai Fukaya and Hajime Hasebe. These collaborations have fostered innovation and development in semiconductor technology.

Conclusion

Toshiyuki Shinya's contributions to semiconductor technology through his patent and work at Renesas Technology Corporation highlight his importance in the field. His innovations continue to impact the reliability and performance of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…