Itami, Japan

Toshio Murotani

This inventor holds 4 USPTO granted patents. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1982-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshio Murotani. Retrieved from https://idiyas.com/inventor/toshio-murotani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.6

ph-index = 4

Forward Citations = 64(Granted Patents)


Location History:

  • Itami, JP (1982 - 1992)
  • Hyogo, JP (2000)

Company Filing History:


Years Active: 1982-2000

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Toshio Murotani

Introduction

Toshio Murotani is a notable inventor based in Itami, Japan. He has made significant contributions to the fields of solar energy and infrared imaging technology. With a total of 4 patents to his name, Murotani's work exemplifies innovation and practicality in engineering.

Latest Patents

One of Murotani's latest patents is a method of and apparatus for manufacturing thin solar batteries. This process simplifies the formation of electrodes during the modularization of solar batteries. The manufacturing method and apparatus allow for the production of thin solar batteries at a reduced cost and with improved yield. A robot equipped with a suction chip handles semiconductor films without causing damage, accurately placing them onto a glass substrate that serves as a window for the solar battery. The simultaneous printing of p-type and n-type electrodes on the arranged semiconductor films further streamlines the manufacturing process. Additionally, a monolithic tab electrode is soldered to connect the electrodes, simplifying the overall production of solar batteries.

Another significant patent by Murotani is a method of making an infrared imaging device. This device features an infrared detector element with a pin structure that detects infrared rays ranging from 8 to 12 microns in wavelength. The pin structure includes a multiquantum well structure as an intrinsic layer, which consists of multiple Al.sub.y Ga.sub.1-y As quantum well layers sandwiched between Al.sub.x Ga.sub.1-x As quantum barrier layers. The infrared imaging device integrates a plurality of picture units, each containing an infrared detector element and a corresponding GaAs FET, which can be monolithically integrated on the same substrate.

Career Highlights

Murotani has worked with prominent companies, including Mitsubishi Electric Corporation. His experience in these organizations has contributed to his expertise and innovative capabilities in the field of technology.

Collaborations

Throughout his career, Murotani has collaborated with notable individuals such as Yoshinori Matsuno and Yoshitatsu Kawama. These collaborations have likely fostered an environment of creativity and innovation, leading to the development of groundbreaking technologies.

Conclusion

Toshio Murotani's contributions to solar energy and infrared imaging technology highlight his role as a significant inventor. His innovative patents and collaborations reflect a commitment to advancing technology for practical applications

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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