The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1992
Filed:
Jun. 18, 1991
Toshio Murotani, Itami, JP;
Abstract
An infrared imaging device includes an infrared detector element having a pin structure which detects infrared rays 8 to 12 macrons in wavelength. The pin structure comprises a multiquantum well structure as an intrinsic layer including a plurality of Al.sub.y Ga.sub.1-y As quantum well layers sandwiched by respective Al.sub.x Ga.sub.1-x As quantum barrier layers (x>y) and a p type Al.sub.x Ga.sub.1-x As layer and an n type Al.sub.x Ga.sub.1-x As layer sandwiching the intrinsic layer. An infrared imaging device includes a plurality of picture units, each picture unit including an infrared detector element and a corresponding GaAs FET having a source region connected with the n layer of the infrared detector element on the same substrate. The picture unit and corresponding FET may be monolithically integrated on the same substrate with an n type channel in the substrate interconnecting the picture unit and the corresponding FET.