Location History:
- Osaka, JP (1985 - 1998)
- Itami, JP (2012)
Company Filing History:
11 out of 10,250 
4 out of 522 
1 out of 2 Years Active: 1985-2012
Title: Toshihiro Kotani: Innovator in GaN Substrates and Superconducting Materials
Introduction
Toshihiro Kotani is a prominent inventor based in Osaka, Japan. He has made significant contributions to the fields of semiconductor technology and superconducting materials. With a total of 12 patents to his name, his work has had a substantial impact on modern technology.
Latest Patents
Among his latest innovations is a GaN substrate and light-emitting device. This GaN substrate features an absorption coefficient not lower than 7 cm for light with a wavelength of 380 nm and 1500 nm. It also has an absorption coefficient lower than 7 cm for light with wavelengths between 500 nm and 780 nm, along with a specific resistance not higher than 0.02 Ωcm. This innovation provides a GaN substrate that is suitable for light-emitting devices, ensuring low absorption coefficients within the light emission wavelength region. Additionally, he has developed a novel superconducting oxide material containing a compound oxide represented by a specific formula.
Career Highlights
Toshihiro Kotani has worked with notable companies such as Sumitomo Electric Industries and Nippon Telegraph and Telephone Public Corporation. His experience in these organizations has allowed him to refine his expertise in materials science and semiconductor technology.
Collaborations
Throughout his career, Kotani has collaborated with esteemed colleagues, including Kohji Tada and Akihisa Kawasaki. These partnerships have contributed to the advancement of his research and innovations.
Conclusion
Toshihiro Kotani's contributions to the fields of GaN substrates and superconducting materials highlight his role as a leading inventor. His innovative patents continue to influence technology and pave the way for future advancements.