The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1985
Filed:
Apr. 15, 1983
Shintaro Miyazawa, Kanagawa, JP;
Yasushi Nanishi, Kanagawa, JP;
Kohji Tada, Osaka, JP;
Akihisa Kawasaki, Osaka, JP;
Toshihiro Kotani, Osaka, JP;
Nippon Telegraph & Telephone Public Corporation, Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A process for manufacturing boron-doped GaAs single crystals which comprises preparing a mixture of boron, gallium and arsenic covered by a liquid B.sub.2 O.sub.3 encapsulant, melting the mixture, pulling up boron-doped GaAs crystals from the mixture melts in accordance with the LEC method, crushing those crystals into small pieces after removing the seed end therefrom, remelting those pieces in the presence of B.sub.2 O.sub.3, and pulling up single crystals from the mixture melts in accordance with the LEC method.