The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Dec. 30, 2010
Shinsuke Fujiwara, Itami, JP;
Toshihiro Kotani, Itami, JP;
Fumitake Nakanishi, Itami, JP;
Seiji Nakahata, Itami, JP;
Koji Uematsu, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Toshihiro Kotani, Itami, JP;
Fumitake Nakanishi, Itami, JP;
Seiji Nakahata, Itami, JP;
Koji Uematsu, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
The present GaN substrate can have an absorption coefficient not lower than 7 cmfor light having a wavelength of 380 nm and light having a wavelength of 1500 nm, an absorption coefficient lower than 7 cmfor at least light having a wavelength not shorter than 500 nm and not longer than 780 nm, and specific resistance not higher than 0.02 Ωcm. Here, the absorption coefficient for light having a wavelength not shorter than 500 nm and not longer than 780 nm can be lower than 7 cm. Thus, a GaN substrate having a low absorption coefficient for light having a wavelength within a light emission wavelength region of a light-emitting device and specific resistance not higher than a prescribed value and being suitable for the light-emitting device is provided.