Kyoto, Japan

Toshihiro Kobayashi

This inventor holds 2 USPTO granted patents. Top assignee: Kyocera Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihiro Kobayashi. Retrieved from https://idiyas.com/inventor/toshihiro-kobayashi-w4fgxkgl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 6.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Innovations by Toshihiro Kobayashi

Introduction

Toshihiro Kobayashi is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor substrate and related manufacturing methods.

Latest Patents

Kobayashi holds a patent for a semiconductor substrate, manufacturing method, and manufacturing apparatus for semiconductor devices. The patent describes a main substrate, a seed portion located higher than the main substrate, and first and second semiconductor parts arranged side by side in a first direction. The first and second semiconductor parts are in contact with the seed portion, and a hollow portion is located between the main substrate and each of the semiconductor parts.

Career Highlights

Kobayashi is associated with Kyocera Corporation, a leading company in the electronics sector. His work at Kyocera has been instrumental in advancing semiconductor technologies. He has a total of 1 patent to his name, showcasing his innovative capabilities.

Collaborations

Kobayashi has collaborated with notable colleagues such as Katsuaki Masaki and Takeshi Kamikawa. Their combined expertise has contributed to the success of various projects within the semiconductor field.

Conclusion

Toshihiro Kobayashi's contributions to semiconductor technology highlight his role as an influential inventor. His innovative patent and collaborations with esteemed colleagues reflect his commitment to advancing the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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