The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Dec. 28, 2021
Applicant:

Kyocera Corporation, Kyoto, JP;

Inventors:

Takeshi Kamikawa, Kyoto, JP;

Katsuaki Masaki, Kyoto, JP;

Yuichiro Hayashi, Kyoto, JP;

Toshihiro Kobayashi, Kyoto, JP;

Assignee:

KYOCERA Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/20 (2026.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/825 (2025.01); H10P 14/24 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10P 14/2904 (2026.01); H10H 20/01335 (2025.01); H10H 20/8215 (2025.01); H10H 20/825 (2025.01); H10P 14/24 (2026.01); H10P 14/272 (2026.01); H10P 14/276 (2026.01); H10P 14/2905 (2026.01); H10P 14/2921 (2026.01); H10P 14/2926 (2026.01); H10P 14/3216 (2026.01); H10P 14/3252 (2026.01); H10P 14/3254 (2026.01); H10P 14/3416 (2026.01); H10P 14/3444 (2026.01); H10W 90/00 (2026.01);
Abstract

A semiconductor substrate includes a base substrate, a mask layer including an opening portion and a mask portion, and a GaN-based semiconductor layer that includes a GaN-based semiconductor. The GaN-based semiconductor layer includes: a first portion located on the mask portion; and a second portion that is located on the opening portion and has a lower dislocation density of non-threading dislocations in a cross section of the GaN-based semiconductor layer taken along a thickness direction than the first portion.


Find Patent Forward Citations

Kamikawa, Takeshi. (2026). Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device (U.S. Patent No. 12751219). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12751219

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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