This inventor holds 6 USPTO granted patents. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 1992-2002.
Location History:
- Izumi, JP (1992 - 2000)
- Osaka-fu, JP (2002)
Company Filing History:
Years Active: 1992-2002
Title: Toshiaki Kinosada: Innovator in Semiconductor Technology
Introduction
Toshiaki Kinosada is a prominent inventor based in Izumi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the performance and efficiency of electronic components.
Latest Patents
Kinosada's latest patents include a heterojunction bipolar transistor and its manufacturing process. This innovation features a ballast resistance layer between an AlGaAs emitter layer and an emitter electrode, which comprises n-Al Ga As. Additionally, a GaAs selective etching layer is provided between the emitter layer and the ballast resistance layer. Another notable patent is the ohmic electrode structure for the In.sub.x Ga.sub.1-x As layer. This structure is produced by developing an In.sub.x Ga.sub.1-x As layer epitaxially on a compound semiconductor (n-Ga As) and includes a barrier layer made of tungsten nitride. The process involves electrode patterning and the deposition of a metal layer using the lift-off technique.
Career Highlights
Kinosada is currently employed at Sharp Kabushiki Kaisha Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing technologies that are crucial for modern electronic devices.
Collaborations
Throughout his career, Kinosada has collaborated with notable colleagues, including John Kevin Twynam and Motoji Yagura. These partnerships have contributed to the development of cutting-edge technologies in the field.
Conclusion
Toshiaki Kinosada is a distinguished inventor whose work in semiconductor technology has led to several important patents. His contributions continue to shape the future of electronic components and systems.