Yokohama, Japan

Toshiaki Douzaka


Average Co-Inventor Count = 1.6

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Kanagawa-ken, JP (2011)
  • Yokohama, JP (2009 - 2014)
  • Yokohama Kanagawa, JP (2016)

Company Filing History:


Years Active: 2009-2016

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4 patents (USPTO):Explore Patents

Title: Toshiaki Douzaka: Innovator in Semiconductor Memory Technology

Introduction

Toshiaki Douzaka is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor memory devices, holding a total of 4 patents. His innovative work has advanced the technology used in memory cell arrays, enhancing their performance and reliability.

Latest Patents

Among his latest patents, one notable invention is a semiconductor memory device that features a memory cell array arranged in a matrix. This device includes memory cells that can connect to multiple bit lines, along with a capacitance designed to suppress coupling noise among these lines. This innovation aims to improve the overall efficiency of memory operations. Another significant patent involves a row decoder positioned alongside a memory cell array. This decoder supplies a drive signal to select memory cells, while also incorporating dummy word and bit lines to enhance the functionality of the memory device.

Career Highlights

Toshiaki Douzaka is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has been instrumental in developing advanced semiconductor technologies that are crucial for modern electronic devices.

Collaborations

Throughout his career, Douzaka has collaborated with notable colleagues such as Shigeyuki Hayakawa and Yutaka Tanaka. These partnerships have fostered a creative environment that has led to groundbreaking innovations in semiconductor technology.

Conclusion

Toshiaki Douzaka's contributions to semiconductor memory technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to enhancing the performance of memory devices, making a lasting impact on the industry.

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