Company Filing History:
Years Active: 1993-2000
Title: Innovations of Tong-Chern Ong
Introduction
Tong-Chern Ong is a notable inventor based in San Jose, CA. He has made significant contributions to the field of memory devices, holding a total of 7 patents. His work primarily focuses on improving the functionality and efficiency of electrically erasable non-volatile memory devices.
Latest Patents
One of his latest patents is titled "Method for forming an asymmetric floating gate overlap for improved." This patent describes a method of creating an electrically erasable non-volatile EPROM memory device that features an asymmetric floating gate in relation to buried source and drain regions. The invention involves forming a patterned floating gate member over portions of the source and drain regions, resulting in a floating gate-to-source overlap that is less than the floating gate-to-drain overlap.
Another significant patent is "Method and device for improved programming threshold voltage." This invention addresses the series resistance effect in electrically programmable read-only memory arrays. It introduces a method where resistors are placed between the ground contact and ground to ensure uniform programming levels across all cells. This innovation is particularly beneficial for multi-level cells, allowing for different threshold voltages to represent various logic states.
Career Highlights
Tong-Chern Ong is currently employed at Intel Corporation, where he continues to develop cutting-edge technologies in memory devices. His expertise and innovative approaches have made a substantial impact on the industry.
Collaborations
Throughout his career, Ong has collaborated with esteemed colleagues, including Ho-Chun Liou and Gregory E Atwood. These partnerships have fostered a creative environment that has led to numerous advancements in memory technology.
Conclusion
Tong-Chern Ong's contributions to the field of memory devices through his innovative patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the development of more efficient and effective memory technologies.