The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1993
Filed:
Dec. 30, 1991
Applicant:
Inventors:
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365218 ; 365185 ; 365201 ;
Abstract
A method of reprogramming field-effect memory cells of a memory array of an electrically erasable flash memory device is described. Each cell has a drain, a source, and a control gate. The drains of the cells are electrically connected to a bit line of the memory array. The cells are programmed and erased. The cells are repaired by grounding the sources and the control gates and taking the bit line to a predetermined potential. The memory array is selectively programmed. Other embodiments include repairing field-effect memory cells connected to a source line or part of a word line. Verification may be done between the repair step and selectively programming step.