This inventor holds 5 USPTO granted patents. Top assignees: Agency of Industrial Science and Technology, Tokyo Shibaura Denki Kabushiki Kaisha, Kabushiki Kaisha Toshiba. Active years: 1984-1988.
Company Filing History:
2 out of 1,430 
2 out of 2,916 
1 out of 53,250 
Years Active: 1984-1988
Title: Tomoyasu Inoue: Innovator in Semiconductor Technology
Introduction
Tomoyasu Inoue is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His innovative work focuses on methods for forming single crystal semiconductor layers, which are crucial for advancing electronic devices.
Latest Patents
Inoue's latest patents include a method of forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material. This process involves scanning a region of the material with an electron beam, utilizing a first pair of deflection electrodes and a second pair of deflection electrodes. The deflection signal is generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal. This allows the electrodes to rapidly deflect the electron beam in a first direction while changing the range of deflection, forming a locus of the beam spot on the sample. Simultaneously, the second pair of deflection electrodes anneals a region of the material, resulting in the formation of a single crystal semiconductor layer.
Career Highlights
Throughout his career, Inoue has worked with notable companies such as Tokyo Shibaura Denki and the Agency of Industrial Science and Technology. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Inoue has collaborated with several professionals in his field, including Kenji Shibata and Hiroyuki Tango. These collaborations have further enhanced his research and development efforts in semiconductor technology.
Conclusion
Tomoyasu Inoue is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His innovative methods for forming single crystal semiconductor layers continue to influence the development of electronic devices.