The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1987
Filed:
Mar. 04, 1985
Applicant:
Inventor:
Tomoyasu Inoue, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 81 ; 427 79 ; 427 86 ; 427 87 ; 427 95 ;
Abstract
A method is shown which manufactures a semiconductor device having a capacitor. An insulation film having at least one opening of a predetermined pattern is formed on a capacitor formation area on a semiconductor substrate. The opening reaches the surface portion of the semiconductor substrate to permit it to be exposed. A semiconductor layer is selectively grown on the bottom surface of the opening, i.e., on the exposed surface of the semiconductor substrate. Thereafter, the insulation film is removed to leave a recessed region in a capacitor formation area and a capacitor electrode is formed in the capacitor formation area with a gate insulation film therebetween.