The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 1984

Filed:

Aug. 24, 1982
Applicant:
Inventors:

Kenji Shibata, Kawasaki, JP;

Tomoyasu Inoue, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 49 ; 148-15 ; 357 23 ; 357 42 ; 357-4 ; 357 59 ;
Abstract

A stacked semiconductor IC device is disclosed which comprises a single-crystalline semiconductor substrate having planar surfaces with different height and a slant surface, a single-crystalline semiconductive layer which is epitaxially grown from the substrate on or above the substrate, and which has planar surfaces with different height and a slant surface and a substantially uniform thickness, groups of semiconductor elements each formed on the low planar surface of the substrate and on the low planar surface of the layer, and contact wiring pattern passing through the slant portion of the layer to electrically connect the element groups.


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