Yokohama, Japan

Tomoki Maruyama

This inventor holds 3 USPTO granted patents. Top assignees: Sumitomo Electric Device Innovations, Inc., Toyo Seikan Group Holdings, Ltd.. Active years: 2018-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomoki Maruyama. Retrieved from https://idiyas.com/inventor/tomoki-maruyama-shrjo3de

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018-2022

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3 patents (USPTO):Explore Patents

Title: Tomoki Maruyama: Innovator in Semiconductor Technology

Introduction

Tomoki Maruyama is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to device manufacturing.

Latest Patents

Maruyama's latest patents include a semiconductor device that features a field plate on an insulating film covering a transistor. This field plate is electrically coupled to the gate of the transistor via the insulating film. The transistor is situated on a substrate, with a silicon nitride protective film covering both the insulating film and the field plate. Additionally, a silicon oxide base film is placed on the silicon nitride protective film, and a MIM capacitor is positioned on the silicon oxide base film. The MIM capacitor consists of a first electrode, a dielectric film, and a second electrode, which are stacked in a specific order. The formation of the MIM capacitor involves wet etching on the silicon oxide base film after the dielectric film is created.

Another notable patent is a method of manufacturing a semiconductor device. This method includes the formation of a field plate on an insulating film that covers a transistor, which is also electrically coupled to the gate of the transistor via the insulating film. The process involves creating a silicon nitride protective film over the insulating film and field plate, followed by the formation of a silicon oxide base film on the protective film. The MIM capacitor is then formed on the silicon oxide base film, with the same structural components as mentioned in the previous patent.

Career Highlights

Throughout his career, Maruyama has worked with notable companies such as Sumitomo Electric Device Innovations, Inc. and Toyo Seikan Group Holdings, Ltd. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Maruyama has collaborated with talented individuals in his field, including coworkers Takuma Nakano and Shinji Yamada. These collaborations have likely fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.

Conclusion

Tomoki Maruyama is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His patents reflect a deep understanding of device manufacturing and innovation. His contributions continue to influence the industry and inspire future inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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