Sumitomo Electric Device Innovations, Inc.

Toyo Seikan Group Holdings, Ltd.

Tomoki Maruyama

Takuma Nakano

Shinji Yamada

A semiconductor device includes a field plate on an insulating film covering a transistor, the field plate being electrically coupled to a gate of the transistor via the insulating film, and the transistor being located on a substrate, a silicon nitride protective film covering the insulating film and the field plate, a silicon oxide base film on the silicon nitride protective film, and a MIM capacitor on the silicon oxide base film. The MIM capacitor includes a first electrode, a dielectric film and a second electrode which are stacked in an order. The MIM capacitor is formed by performing wet etching on the silicon oxide base film on the field plate after the dielectric film is formed.

Semiconductor device

A method of manufacturing a semiconductor device includes forming a field plate on an insulating film covering a transistor, the field plate being electrically coupled to a gate of the transistor via the insulating film, and the transistor being located on a substrate, forming a silicon nitride protective film covering the insulating film and the field plate, forming a silicon oxide base film on the silicon nitride protective film, and forming a MIM capacitor on the silicon oxide base film. The MIM capacitor includes a first electrode, a dielectric film and a second electrode which are stacked in an order. Forming the MIM capacitor includes performing wet etching on the silicon oxide base film on the field plate after forming the dielectric film.

Method of manufacturing semiconductor device

A heating device and a heating method are disclosed, by which an irregularly shaped object can be evenly and efficiently heated by a plurality of conductive pins smoothly sliding inside through holes so that their tips sufficiently follow the irregular shape of the object, while damage to the conductive pins or the object is prevented. The heating deviceheats an object M placed between opposing electrodesand. At least one of the electrodesincludes a retention platefor retaining a plurality of conductive pinssupported in an electrode platein a state in which the conductive pinsare slid away from an opposite electrode, and a release mechanismfor releasing the plurality of conductive pinsfrom retention by the retention plate

Growing community of inventors

Yokohama, Japan

Tomoki Maruyama