Ting-An Lin

Title: Ting-An Lin: Innovator in Photoresist Technology

Introduction

Ting-An Lin is an inventor based in Taoyuan, Taiwan. He is known for his contributions to the field of photoresist technology, which is crucial in semiconductor manufacturing. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

One of Ting-An Lin's notable patent applications is titled "PHOTORESIST AND FORMATION METHOD THEREOF." This application describes a photoresist composition that includes a mixture of a first photosensitive material and a second photosensitive material. The first photosensitive material can be a 6-Sn oxide cluster, a 12-Sn oxide cluster, or a combination of both. The second photosensitive material has a composition that differs from that of the first.

Another significant application under his name is also titled "PHOTORESIST AND FORMATION METHOD THEREOF." This application outlines a method for manufacturing a semiconductor device, which involves forming a photoresist layer over a material layer on a substrate. The photoresist layer consists of a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by specific formulas, which include ZrO(OH)(RCO) and HfO(OH)(RCO). The photoresist layer is then patterned, and the material layer is etched using the photoresist layer as an etch mask.

Conclusion

Ting-An Lin is an emerging inventor in the field of photoresist technology, with innovative applications that could significantly impact semiconductor manufacturing. His work demonstrates the potential for advancements in this critical area of technology.