The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
May. 09, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Tsing Hua University, Hsinchu City, TW;
Jui-Hsiung Liu, Taipei City, TW;
Pin-Chia Liao, Taoyuan City, TW;
Ting-An Lin, Taoyuan City, TW;
Ting-An Shih, Taichung City, TW;
Yu-Fang Tseng, New Taipei City, TW;
Burn Jeng Lin, Hsinchu City, TW;
Tsai-Sheng Gau, Hsinchu City, TW;
PO-Hsiung Chen, Taichung City, TW;
PO-Wen Chiu, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2):ZrO(OH)(RCO) Formula (A1); orHfO(OH)(RCO) Formula (A2).R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.