Olivet, France

Thomas Tillocher

This inventor holds 1 USPTO granted patent. Top assignee: STMicroelectronics. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thomas Tillocher. Retrieved from https://idiyas.com/inventor/thomas-tillocher-o5qjp96k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovations of Thomas Tillocher

Introduction

Thomas Tillocher is a notable inventor based in Olivet, France. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on methods that enhance the efficiency and precision of silicon etching processes.

Latest Patents

One of Thomas Tillocher's key patents is the "Deep Anisotropic Silicon Etch Method." This innovative method involves anisotropic plasma etching of a silicon wafer, maintained at a temperature ranging from -40°C to -120°C. The process comprises alternated and repeated steps that improve the etching quality and precision.

Career Highlights

Thomas Tillocher is associated with STMicroelectronics, a leading company in the semiconductor industry. His work at STMicroelectronics has allowed him to contribute to advancements in silicon processing technologies. His expertise in plasma etching has positioned him as a valuable asset in the field.

Collaborations

Throughout his career, Thomas has collaborated with esteemed colleagues such as Philippe Lefaucheux and Pierre Ranson. These collaborations have fostered innovation and have led to the development of cutting-edge technologies in semiconductor manufacturing.

Conclusion

Thomas Tillocher's contributions to the field of semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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