The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Apr. 03, 2008
Remi Dussart, Saint Pryve-Saint Mesmin, FR;
Philippe Lefaucheux, Mareau Aux Pres, FR;
Xavier Mellhaoui, Fontaine, FR;
Lawrence John Overzet, Richardson, TX (US);
Pierre Ranson, Orleans, FR;
Thomas Tillocher, Olivet, FR;
Mohamed Boufnichel, Monnaie, FR;
Remi Dussart, Saint Pryve-Saint Mesmin, FR;
Philippe Lefaucheux, Mareau Aux Pres, FR;
Xavier Mellhaoui, Fontaine, FR;
Lawrence John Overzet, Richardson, TX (US);
Pierre Ranson, Orleans, FR;
Thomas Tillocher, Olivet, FR;
Mohamed Boufnichel, Monnaie, FR;
STMicroelectronics, SA, Montrouge, FR;
Abstract
A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from −40° C. to −120° C., comprising alternated and repeated steps of:
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile